IRF7459

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 20V
Power - Max: 2.5W
Current - Continuous Drain (Id) @ 25° C: 12A
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Vgs(th) (Max) @ Id: 2V @ 250µA
Series: HEXFET®
Packaging: Tube
Supplier Device Package: 8-SO
Manufacturer: International Rectifier
Gate Charge (Qg) @ Vgs: 35nC @ 4.5V
Rds On (Max) @ Id, Vgs: 9 mOhm @ 12A, 10V
Input Capacitance (Ciss) @ Vds: 2480pF @ 10V


Application

* High Frequency DC-DC Isolated
   Converters with Synchronous Rectification
   for Telecom and Industrial use
* High Frequency Buck Converters for
   Computer Processor Power


Pinout




Specifications

Symbol	Parameter	Max.	Units
VDS	Drain-to-Source Voltage	20	V
VGS	Gate-to-Source Voltage	± 12	V
ID @ TA = 25°C	Continuous Drain Current, VGS @ 10V	12	A
ID @ TA = 70°C	Continuous Drain Current, VGS @ 10V	10
IDM	Pulsed Drain Current	100
PD @TA = 25°C	Maximum Power Dissipation	2.5	W
PD @TA = 70°C	Maximum Power Dissipation	1.6	W
	Linear Derating Factor	0.02	W/
TJ TSTG	Junction and Storage Temperature Range	-55 to + 155