IRF7455

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Power - Max: 2.5W
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Vgs(th) (Max) @ Id: 2V @ 250µA
Series: HEXFET®
Packaging: Tube
Current - Continuous Drain (Id) @ 25° C: 15A
Supplier Device Package: 8-SO
Manufacturer: International Rectifier
Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 15A, 10V
Gate Charge (Qg) @ Vgs: 56nC @ 5V
Input Capacitance (Ciss) @ Vds: 3480pF @ 25V


Application

* High Frequency DC-DC Converters
   with Synchronous Rectification


Pinout




Specifications

Symbol	Parameter	Max.	Units
VDS	Drain-Source Voltage	30	V
VGS	Gate-to-Source Voltage	± 12	V
ID @ TA = 25	Continuous Drain Current, VGS @ 10V	15	A
ID @ TA = 70	Continuous Drain Current, VGS @ 10V	12
IDM	Pulsed Drain CurrentÅ	120
PD @TA = 25	Maximum Power DissipationÉ	2.5	W
PD @TA = 70	Maximum Power DissipationÉ	1.6	W
	Linear Derating Factor	0.02	W/
TJ , TSTG	Junction and Storage Temperature Range	-55 to + 150