FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
FET Feature: Standard
Power - Max: 2.5W
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Gate Charge (Qg) @ Vgs: 38nC @ 10V
Series: HEXFET®
Drain to Source Voltage (Vdss): 250V
Current - Continuous Drain (Id) @ 25° C: 2.2A
Packaging: Tube
Supplier Device Package: 8-SO
Manufacturer: International Rectifier
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Input Capacitance (Ciss) @ Vds: 930pF @ 25V
Rds On (Max) @ Id, Vgs: 230 mOhm @ 1.3A, 10V
Application· High frequency DC-DC converters
· Lead-FreePinout
Specifications
| |
Parameter |
Maximum |
Units |
| ID @ TA = 25 |
Continuous Drain Current, VGS @ 10V |
2.2 |
A |
| ID @ TA = 70 |
Continuous Drain Current, VGS @ 10V |
1.7 |
| IDM |
Pulsed Drain Current |
17 |
| PD @TA = 25 |
Power Dissipation |
2.5 |
W |
| |
Linear Derating Factor |
0.02 |
mW/ |
| VGS |
Linear Derating Factor |
± 20 |
V |
| dv/dt |
Peak Diode Recovery dv/dt |
13 |
V/ns |
| TJ,TSTG |
Operating Junction and
Storage Temperature Range |
-55 to +150 |
|
| |
Soldering Temperature, for 10 seconds |
300 (1.6mm from case ) |
Parameters: | Technical/Catalog Information | IRF7453PBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 250V |
| Current - Continuous Drain (Id) @ 25° C | 2.2A |
| Rds On (Max) @ Id, Vgs | 230 mOhm @ 1.3A, 10V |
| Input Capacitance (Ciss) @ Vds | 930pF @ 25V |
| Power - Max | 2.5W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 38nC @ 10V |
| Package / Case | 8-SOIC (3.9mm Width) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRF7453PBF
IRF7453PBF
|
IRF7453PBF Data Sheet
