IRF7452QPBF

Resistance Drain-Source RDS (on) :
Configuration :
Maximum Operating Temperature :
Packaging :
Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 100 V
Package / Case : SOIC-8
Gate-Source Breakdown Voltage : 30 V
Continuous Drain Current : 4.5 A


Features:

  Advanced Process Technology
  Ultra Low On-Resistance
  N Channel MOSFET
  Surface Mount
  Available in Tape & Reel
  150Operating Temperature
  Automotive [Q101] Qualified
 Lead-Free


Pinout




Specifications

	Parameter	Max.	Units
ID @ TA = 25	Continuous Drain Current	4.5	A
ID @ TA = 70	C Continuous Drain Current	3.6
IDM	Pulsed Drain Current	36
PD @TA= 25	Maximum Power Dissipation	2.5	W
	Linear Derating Factor	0.02	W/
VGS	Gate-to-Source Voltage	± 30	V
dv/dt	Peak Diode Recovery dv/dt	3.5	V/ns
TJ TSTG	Operating Junction Storage Temperature Range	-55 to +150
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )

Description

Specifically designed for Automotive applications, these HEXFET® Power MOSFET's in SO-8 package utilize the lastest processing techniques to achieve extremely low onresistance per silicon area. Additional features of these Automotive qualified HEXFET Power MOSFET's are a 150 junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits IRF7452QPbF combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. The efficient SO-8 package provides enhanced thermal characteristics making it ideal in a variety of power applications. This surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel.

Parameters:

Technical/Catalog Information	IRF7452QPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	4.5A
Rds On (Max) @ Id, Vgs	60 mOhm @ 2.7A, 10V
Input Capacitance (Ciss) @ Vds	930pF @ 25V
Power - Max	2.5W
Packaging	Tube
Gate Charge (Qg) @ Vgs	50nC @ 10V
Package / Case	8-SOIC (3.9mm Width)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRF7452QPBF IRF7452QPBF