MOSFET N-CH 150V 3.6A 8-SOIC
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Symbol | Parameter | Max. | Units |
ID @ TA = 25 | Continuous Drain Current, VGS @ 10V | 3.6 | A |
ID @ TA = 100 | Continuous Drain Current, VGS @ 10V | 2.9 | |
IDM | Pulsed Drain Current | 29 | |
PD @TA = 25 | Power Dissipation | 2.5 | W |
Linear Derating Factor | 0.02 | W/ | |
VGS | Gate-to-Source Voltage | ± 30 | V |
dv/dt | Peak Diode Recovery dv/dt | 7.9 | V/ns |
TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 150 | |
Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) |
Technical/Catalog Information | IRF7451PBF |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 150V |
Current - Continuous Drain (Id) @ 25° C | 3.6A |
Rds On (Max) @ Id, Vgs | 90 mOhm @ 2.2A, 10V |
Input Capacitance (Ciss) @ Vds | 990pF @ 25V |
Power - Max | 2.5W |
Packaging | Bulk |
Gate Charge (Qg) @ Vgs | 41nC @ 10V |
Package / Case | 8-SOIC (3.9mm Width) |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IRF7451PBF IRF7451PBF |