IRF744PBF

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220AB
Continuous Drain Current : 8.8 A
Resistance Drain-Source RDS (on) : 0.63 Ohms
Drain-Source Breakdown Voltage : 450 V


Features:






Specifications






Description

      The featrues of IRF744PbF are Dynamic dv/dt Rating, Repetitive Avalanche Rated, Fast Switching, Ease of Paralleling, Simple Drive Requirements, Lead-Free.
      The desciption is third Generation HEXFETs from lntemational Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package of the IRF744PbF is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and law package cost of the TO-220 contribute to its wide acceptance throughout the industry.