Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 20V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
FET Type: MOSFET P-Channel, Metal Oxide
Power - Max: 2.5W
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Series: HEXFET®
Packaging: Tube
Current - Continuous Drain (Id) @ 25° C: 15A
Supplier Device Package: 8-SO
Manufacturer: International Rectifier
Gate Charge (Qg) @ Vgs: 130nC @ 4.5V
Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 15A, 4.5V
Input Capacitance (Ciss) @ Vds: 7980pF @ 15V
Features: These P-Channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications..
The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering techniques.
Specifications
|
Parameter |
Max. |
Units |
| ID @ TA = 25°C |
Continuous Drain Current, VGS @ -10V |
-15 |
A |
| ID @ TA = 70°C |
Continuous Drain Current, VGS @ -10V |
-12 |
A |
| IDM |
Pulsed Drain Current |
-60 |
A |
PD @TA = 25°C
TA = 70°C |
Maximum Power Dissipation |
2.5
1.6 |
W |
|
Linear Derating Factor |
20 |
mW/°C |
| VDS |
Drain- Source Voltage |
-20 |
V |
| VGS |
Gate-to-Source Voltage |
± 12 |
V |
| TJ , TSTG |
Junction and Storage Temperature Range |
-55 to + 150 |
°C |
IRF7425 Data Sheet
