IRF7424PBF

MOSFET

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IRF7424PBF Picture
SeekIC No. : 00149900 Detail

IRF7424PBF: MOSFET

floor Price/Ceiling Price

US $ .35~.97 / Piece | Get Latest Price
Part Number:
IRF7424PBF
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.97
  • $.6
  • $.41
  • $.35
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 30 V
Gate-Source Breakdown Voltage : 20 V Continuous Drain Current : - 11 A
Resistance Drain-Source RDS (on) : 22 mOhms Configuration : Single Quad Drain Triple Source
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Packaging : Tube    

Description

Mounting Style : SMD/SMT
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single Quad Drain Triple Source
Gate-Source Breakdown Voltage : 20 V
Package / Case : SOIC-8
Drain-Source Breakdown Voltage : - 30 V
Resistance Drain-Source RDS (on) : 22 mOhms
Continuous Drain Current : - 11 A


Features:

·Ultra Low On-Resistance
·P-Channel MOSFET
·Surface Mount
·Available in Tape & Reel
·Lead-Free



Pinout

  Connection Diagram


Specifications

  Parameter Max. Units
VDS Drain- Source Voltage -30 V
ID @ TA = 25 Continuous Drain Current, VGS @ -10V -11 A
ID @ TA = 70 Continuous Drain Current, VGS @ -10V -9.3
IDM Pulsed Drain Current -47
PD @TA = 25 Power Dissipation 2.5 W
PD @TA = 70 Power Dissipation 1.6
  Linear Derating Factor 20 mW/
VGS Gate-to-Source Voltage ±20 V
TJ, TSTG Junction and Storage Temperature Range -55 to + 150



Description

These P-Channel MOSFETs IRF7424PbF from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications..

The SO-8 IRF7424PbF has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering technique.


Parameters:

Technical/Catalog InformationIRF7424PBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C11A
Rds On (Max) @ Id, Vgs13.5 mOhm @ 11A, 10V
Input Capacitance (Ciss) @ Vds 4030pF @ 25V
Power - Max2.5W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs110nC @ 10V
Package / Case8-SOIC (3.9mm Width)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRF7424PBF
IRF7424PBF



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