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IRF7424

Features: · Ultra Low On-Resistance· P-Channel MOSFET· Surface Mount· Available in Tape & ReelSpecifications Parameter Max. Units VDS Drain-Source Voltage -30 V ID @ TA = 25°C Continuous Drain Current, VGS @ -10V -11 A ID @ TA = 70°C Continuous Drain Current, VGS @ -10...

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SeekIC No. : 004376772 Detail

IRF7424: Features: · Ultra Low On-Resistance· P-Channel MOSFET· Surface Mount· Available in Tape & ReelSpecifications Parameter Max. Units VDS Drain-Source Voltage -30 V ID @ TA = 25°C ...

IRF7424 Data Sheet

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Part Number:
IRF7424
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

· Ultra Low On-Resistance
· P-Channel MOSFET
· Surface Mount
· Available in Tape & Reel




Specifications

Parameter Max. Units
VDS Drain-Source Voltage -30 V
ID @ TA = 25°C Continuous Drain Current, VGS @ -10V -11 A
ID @ TA = 70°C Continuous Drain Current, VGS @ -10V -9.3 A
IDM Pulsed Drain Current -47 A
PD @TA = 25°C Maximum Power Dissipation 2.5 W
PD @TA = 70°C Maximum Power Dissipation 1.6 W
Linear Derating Factor 20 mW/°C
VGS Gate-to-Source Voltage ± 20 V
TJ , TSTG Junction and Storage Temperature Range -55 to + 150 °C





Description

These P-Channel MOSFETs IRF7424 from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications..

The SO-8 IRF7424 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering techniques.






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