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IRF7422D2

Specifications Parameter Maximum Units ID @ TA = 25°C Continuous Drain Current, VGS @-4.5V -4.3 A ID @ TA = 70°C -3.4 IDM Pulsed Drain Current -33 PD @TA = 25°C Power Dissipation 2.0 W PD @TA = 70°C 1.3 Linear Derating Factor 16 mW/°C...

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IRF7422D2: Specifications Parameter Maximum Units ID @ TA = 25°C Continuous Drain Current, VGS @-4.5V -4.3 A ID @ TA = 70°C -3.4 IDM Pulsed Drain Current -33 PD @TA = 25...

IRF7422D2 Data Sheet

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Part Number:
IRF7422D2
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Specifications

Parameter
Maximum
Units
ID @ TA = 25°C Continuous Drain Current, VGS @-4.5V
-4.3
A
ID @ TA = 70°C
-3.4
IDM Pulsed Drain Current
-33
PD @TA = 25°C Power Dissipation
2.0
W
PD @TA = 70°C
1.3
Linear Derating Factor
16
mW/°C
VGS Gate-to-Source Voltage
± 12
V
dv/dt Peak Diode Recovery dv/dt
-5.0
V/ns
TJ, TSTG Junction and Storage Temperature Range
-55 to +150
°C





Description

The FETKYTM family of Co-packaged HEXFETs and Schottky diodes IRF7422D2 offer the designer an innovative board space saving solution for switching regulator and power management applications. Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combinining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications.

The SO-8 IRF7422D2 has been modified through a customized leadframe for enhanced thermal characteristics. The SO-8 package is designed for vapor phase, infrared or wave soldering techniques.






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