IRF7421D1PBF

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : 20 V
Package / Case : SOIC-8
Resistance Drain-Source RDS (on) : 60 mOhms
Continuous Drain Current : 5.8 A
Configuration : Single Quad Drain Dual Source


Features:

· Co-packaged HEXFET^® Power MOSFET and Schottky Diode
· Ideal For Synchronous Regulator Applications
· Generation V Technology
· SO-8 Footprint
· Lead-Free


Specifications

	Parameter	Max.	Units
ID @ TA = 25 ID @ TA = 70 IDM	Continuous Drain Current, VGS @ 10V Pulsed Drain Current	5.8 4.6 46	A
PD @ TA = 25 PD @ TA = 70	Power Dissipation	2.0 1.3	W
	Linear Derating Factor	16	W/
VGS	Gate-to-Source Voltage	± 20	V
dv/dt	Peak Diode Recovery dv/dt	-5.0	V/ns
TJ, TSTG	Junction and Storage Temperature Range	-55 to +150

Notes:
` Repetitive rating; pulse width limited by maximum junction temperature (see figure 11)
` I_SD 4.1A, di/dt 110A/s, V_DD V_(BR)DSS, T_J 150
` Pulse width 300s; duty cycle 2%
` Surface mounted on FR-4 board, t 10sec.

 

Description

The FETKY^TM family of co-packaged HEXFETs and Schottky diodes IRF7421D1PbF offer the designer an innovative board space saving solution for switching regulator applications. Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications.

The SO-8 IRF7421D1PbF has been modified through a customized leadframe for enhanced thermal characteristics. The SO-8 package is designed for vapor phase, infrared or wave soldering techniques.

Parameters:

Technical/Catalog Information	IRF7421D1PBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	5.8A
Rds On (Max) @ Id, Vgs	35 mOhm @ 4.1A, 10V
Input Capacitance (Ciss) @ Vds	510pF @ 25V
Power - Max	2W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	27nC @ 10V
Package / Case	8-SOIC (3.9mm Width)
FET Feature	Diode (Isolated)
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRF7421D1PBF IRF7421D1PBF