FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Vgs(th) (Max) @ Id: 1V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
FET Feature: Diode (Isolated)
Power - Max: 2W
Gate Charge (Qg) @ Vgs: 27nC @ 10V
Input Capacitance (Ciss) @ Vds: 510pF @ 25V
Packaging: Tube
Current - Continuous Drain (Id) @ 25° C: 5.8A
Supplier Device Package: 8-SO
Manufacturer: International Rectifier
Series: FETKY™
Rds On (Max) @ Id, Vgs: 35 mOhm @ 4.1A, 10V
Specifications
| Parameter |
Maximum |
Units |
| ID @ TA = 25°C |
Continuous Drain Current, VGS @ 10V |
5.8 |
A |
| ID @ TA = 70°C |
4.6 |
| IDM |
Pulsed Drain Current |
46 |
| PD @TA = 25°C |
Power Dissipation |
2.0 |
W |
| PD @TA = 70°C |
1.3 |
|
Linear Derating Factor |
16 |
mW/°C |
| VGS |
Gate-to-Source Voltage |
± 20 |
V |
| dv/dt |
Peak Diode Recovery dv/dt |
-5.0 |
V/ns |
| TJ, TSTG |
Junction and Storage Temperature Range |
-55 to +150 |
°C |
DescriptionThe FETKY family of co-packaged HEXFETs and Schottky diodes IRF7421D1 offer the designer an innovative board space saving solution for switching regulator applications. Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications.
The SO-8 IRF7421D1 has been modified through a customized leadframe for enhanced thermal characteristics. The SO-8 package is designed for vapor phase,infrared or wave soldering techniques. TM
IRF7421D1 Data Sheet
