IRF7420TR

MOSFET P-CH 12V 11.5A 8-SOIC

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SeekIC No. : 003433002 Detail

IRF7420TR: MOSFET P-CH 12V 11.5A 8-SOIC

floor Price/Ceiling Price

US $ .54~.54 / Piece | Get Latest Price
Part Number:
IRF7420TR
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~4000
  • Unit Price
  • $.54
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/12/26

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Product Details

Quick Details

Series: HEXFET® Manufacturer: International Rectifier
FET Type: MOSFET P-Channel, Metal Oxide Transistor Type: -
Current - Collector (Ic) (Max): - FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 12V Continuous Drain Current : 15 A
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 11.5A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 14 mOhm @ 11.5A, 4.5V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) @ Vgs: 38nC @ 4.5V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 3529pF @ 10V
Power - Max: 2.5W Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO    

Description

Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
FET Type: MOSFET P-Channel, Metal Oxide
Vgs(th) (Max) @ Id: 900mV @ 250µA
Drain to Source Voltage (Vdss): 12V
Packaging: Tape & Reel (TR)
Power - Max: 2.5W
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Series: HEXFET®
Gate Charge (Qg) @ Vgs: 38nC @ 4.5V
Supplier Device Package: 8-SO
Manufacturer: International Rectifier
Current - Continuous Drain (Id) @ 25° C: 11.5A
Rds On (Max) @ Id, Vgs: 14 mOhm @ 11.5A, 4.5V
Input Capacitance (Ciss) @ Vds: 3529pF @ 10V


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