IRF7416PBF

Mounting Style : SMD/SMT
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single Quad Drain Triple Source
Gate-Source Breakdown Voltage : 20 V
Package / Case : SOIC-8
Drain-Source Breakdown Voltage : - 30 V
Resistance Drain-Source RDS (on) : 35 mOhms
Continuous Drain Current : - 10 A


Features:






Specifications






Description

      IRF7416PbF is a kind of SMPS MOSFET.Here you can get some information about the features.First is Generation V technology.The second is ultra low on-resistance.The third one is P-Channel Mosfet.The fourth one is surface mount.The fifth is available in Tape and Reel.The sixth is dynamic dv/dt rating.The last one is fast switching.
      The following is about the absolute maximum ratings IRF7416PbF.The maximum I_D (continuous drain current) is -10 A at T_A=25,V_GS=-10 V and -7.1 A at T_A=70,V_GS=-10 V.The maximum I_DM (pulsed drain current) is -45 A.The maximum V_GS (gate-to-source voltage) is ±20 V.The maximum P_D (power dissipation) is 2.5 W at T_A=25.The T_J and T_STG (operating junction and storage temperature range) are both from -55 to +150.The soldering temperature for 10 seconds is 300.The maximum dv/dt (peak diode recovery dv/dt) is -5.0 V/ns.The E_AS (single pulse avalanche energy) is 370 mJ.Then is about the thermal resistance.The maximum R_JA (Junction-to-Ambient ) is 50/W.
      There are the static electrical characteristics IRF7416PbF at T_J=25.The minimum V_(BR)DSS (drain-to-source breakdown voltage) is -30 V at V_GS=0 V,I_D=-250A.The typical V_(BR)DSS/T_J (breakdown voltage temperature coefficient) is -0.024 V/ at reference to 25 and I_D=-1 mA.The minimum V_GS(th) (gate threshold voltage) is -1.0 V at V_DS=V_GS,I_D=-250A.The minimum gfs (gate threshold voltage) is 5.6 S at V_DS=-10 V,I_D=-2.8 A.The maximum I_DSS (drain to source leakage current) is -1.0A at V_DS=-24 V,V_GS=0 V and is -2.5A at V_DS=-24 V,V_GS=0 V,T_J=125.The maximum (I_GSS) (gate-to-source forward current) is 100 nA at V_GS=30 V.The maximum (I_GSS) (gate-to-source forward leakage)IRF7416PbF is -100 nA at V_GS=-20 V and the (I_GSS) (gate-to-source reverse leakage) is 100 nA at V_GS=20 V.

Parameters:

Technical/Catalog Information	IRF7416PBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	10A
Rds On (Max) @ Id, Vgs	20 mOhm @ 5.6A, 10V
Input Capacitance (Ciss) @ Vds	1700pF @ 25V
Power - Max	2.5W
Packaging	Tube
Gate Charge (Qg) @ Vgs	92nC @ 10V
Package / Case	8-SOIC (3.9mm Width)
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRF7416PBF IRF7416PBF