IRF7413ZTR

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Power - Max: 2.5W
Gate Charge (Qg) @ Vgs: 14nC @ 4.5V
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Series: HEXFET®
Current - Continuous Drain (Id) @ 25° C: 13A
Supplier Device Package: 8-SO
Manufacturer: International Rectifier
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Rds On (Max) @ Id, Vgs: 10 mOhm @ 13A, 10V
Input Capacitance (Ciss) @ Vds: 1210pF @ 15V


Pinout




Description

IRF7413ZTR is one type of IRF7413Z. The following is some information about IRF7413Z. The IRF7413Z is a kind of HEXFET power MOSFET. The typical applications include control FET for notebook processor power, control and synchronous rectifier MOSFET for graphics cards and POL converters in computing, networking and telecommunication systems.

There are some benefits of the IRF7413ZTR as follows. First is ultra-low gate impedance. The second is very low RDS(on). The last one is fully characterized avalanche voltage and current.

What comes next is about the absolute maximum ratings of the IRF7413ZTR. The VDS (Drain-to-Source Voltage) is 30 V. The VGS (Gate-to-Source Voltage) is ± 20 V. The ID @ TA=25 (continuous drain current, VGS @ 10 V) is 13 A. The ID @ TA=70 (continuous drain current, VGS @ 10 V) is 10 A. The IDM (pulse drain current) is 100 A. The PD @ TA=25 (maximum power dissipation) is 2.5 W and 1.6 W at TA=70. The TSTG (storage temperature) is from -55 to 150. The TJ(operating junction temperature) is from -55 to 150. The maximum RthJL (thermal resistance, Junction-to-Drain Lead) is 20/W. The maximum RthJA (thermal resistance, Junction-to Ambient) is 50/W.