IRF7413Z

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Power - Max: 2.5W
Gate Charge (Qg) @ Vgs: 14nC @ 4.5V
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Series: HEXFET®
Current - Continuous Drain (Id) @ 25° C: 13A
Packaging: Tube
Supplier Device Package: 8-SO
Manufacturer: International Rectifier
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Rds On (Max) @ Id, Vgs: 10 mOhm @ 13A, 10V
Input Capacitance (Ciss) @ Vds: 1210pF @ 15V


Features:

·Ultra-Low Gate Impedance
·Very Low RDS(on)
·Fully Characterized Avalanche Voltage and Current


Application

·Control FET for Notebook Processor Power
·Control and Synchronous Rectifier MOSFET for Graphics Cards and POL Converters in Computing, Networking and Telecommunication Systems


Specifications

	Parameter	Max.	Units
VDS	Drain-to-Source Voltage	30	V
VGS	Gate-to-Source Voltage	± 20
ID @ TA = 25	Continuous Drain Current, VGS @ 10V	13	A
ID @ TA = 70	Continuous Drain Current, VGS @ 10V	10
IDM	Pulsed Drain Current	100
PD @TA = 25	Power Dissipation	2.5	W
PD @TA = 70	Power Dissipation	1.6
	Linear Derating Factor	0.02	W/
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 150