Features: ·Generation VTechnology·Ultra Low On-Resistance·Surface Mount·Available in Tape & Reel·Dynamic dv/dt Rating·Fast Switching·100% RG Tested·Lead-FreeSpecifications Symbol Parameter Max Units VDS Drain-to-Source Voltage 30 V VGS Gate-to-Source Voltage ± 20...
IRF7413RbF: Features: ·Generation VTechnology·Ultra Low On-Resistance·Surface Mount·Available in Tape & Reel·Dynamic dv/dt Rating·Fast Switching·100% RG Tested·Lead-FreeSpecifications Symbol Paramet...
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Symbol |
Parameter |
Max |
Units |
VDS | Drain-to-Source Voltage |
30 |
V |
VGS | Gate-to-Source Voltage |
± 20 | |
ID @ TA = 25 | Continuous Drain Current, VGS @ 10V |
13 |
A |
ID @ TA = 70 | Continuous Drain Current, VGS @ 10V |
9.2 | |
IDM | Pulsed Drain Current |
58 | |
PD @TA = 25 | Power Dissipation |
2.5 |
W |
Linear Derating Factor |
0.02 |
mW/ | |
EAS | Single Pulse Avalanche Energency |
260 |
mJ |
dv/dt | Peak Diode Recovery dv/dt |
5.0 |
V/ns |
TJ, TSTG | Junction and Storage Temperature Range |
-55 to +150 |
Fifth Generation HEXFETs of the IRF7413RbF from lnternational Rectifierutilize advanced pro cessing techniques to achieve extremely low on-resistance per siling speed and ruggedized device with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are wellknown for,provides the designer with an extremely efficient and reliable device for use in awide variety of applications.
The SO-8 of the IRF7413RbF has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capabilty making it ideal in a variety of power applications,With these improvements,multiple devices can be used in an application with dramatically reduced board space.The package is designed for vapor phase,infra red,or wave soldering techniques.Power dissipation of greater than 0.8W is possible in a typical PCB mount application.