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IRF7413A

HEX/MOS N-CH 30V 12A 8-SOIC

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SeekIC No. : 004376765 Detail

IRF7413A: HEX/MOS N-CH 30V 12A 8-SOIC

IRF7413A Data Sheet

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Part Number:
IRF7413A
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Description



Features:

* Generation V Technology
* Ultra Low On-Resistance
* N-Channel Mosfet
* Surface Mount
* Available in Tape & Reel
* Dynamic dv/dt Rating
* Fast Switching


Pinout

Connection Diagram


Specifications

  Parameter Max. Units
ID @ TA = 25 Continuous Drain Current, VGS @ 10V 12 A
ID @ TA =70 Continuous Drain Current, VGS @ 10V 8.4
IDM Pulsed Drain Current 58
PD @ TA = 25 Power Dissipation 2.5 W
  Linear Derating Factor 0.02

W/
V

VGS Gate-to-Source Voltage ± 20
EAS Single Pulse Avalanche Energy 260 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJ,TSTG Junction and Storage Temperature Range -55 to + 150



Description

Fifth Generation HEXFETs of the IRF7413A from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The SO-8 of the IRF7413A has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application.




Parameters:

Technical/Catalog InformationIRF7413A
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C12A
Rds On (Max) @ Id, Vgs13.5 mOhm @ 6.6A, 10V
Input Capacitance (Ciss) @ Vds 1800pF @ 25V
Power - Max2.5W
PackagingTube
Gate Charge (Qg) @ Vgs79nC @ 10V
Package / Case8-SOIC (3.9mm Width)
FET FeatureLogic Level Gate
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names IRF7413A
IRF7413A



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