MOSFET N-CH 30V 13A 8-SOIC
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Parameter | Max. | Units | |
ID @ TA = 25 | Continuous Drain Current, VGS @ 10V | 12 | A |
ID @ TA =70 | Continuous Drain Current, VGS @ 10V | 9.6 | |
IDM | Pulsed Drain Current | 96 | |
PD @ TA = 25 | Power Dissipation | 2.5 | W |
Linear Derating Factor | 0.02 | W/ | |
VGS | Gate-to-Source Voltage | ± 20 | V |
dv/dt | Peak Diode Recovery dv/dt | 1.0 | V/ns |
TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 150 | |
Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) |
Technical/Catalog Information | IRF7413 |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 13A |
Rds On (Max) @ Id, Vgs | 11 mOhm @ 7.3A, 10V |
Input Capacitance (Ciss) @ Vds | 1800pF @ 25V |
Power - Max | 2.5W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 79nC @ 10V |
Package / Case | 8-SOIC (3.9mm Width) |
FET Feature | Logic Level Gate |
Lead Free Status | Contains Lead |
RoHS Status | RoHS Non-Compliant |
Other Names | IRF7413 IRF7413 |