MOSFET N-Chan 400V 10 Amp
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 400 V | ||
Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 10 A | ||
Resistance Drain-Source RDS (on) : | 0.55 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-220AB | Packaging : | Tube |
The IRF740LC has six features.The first one is ultra low gate charge.The second one is reduced gate drive requiremen.The third one is enhanced 30V VGS rating.The fourth one is reduced Ciss,Cass,Crss.The fifth one is extremely.The sixth one is repetitive avalanche rated.
The IRF740LC has some absolute maximum ratings.When parameter is continuous drain current,VGS @ 10V,the symbol is ID@TC=25,the Max. is 10,the units is A.When parameter is continuous drain current,VGS @ 10V,the symbol is ID@TC=100,the Max. is 6.3,the units is A.When parameter is pulsed drain current,the symbol is IDM,the Max. is 32,the units is A.When parameter is power dissipation,the symbol is PD@TC=25,the Max. is 125,the units is W.When parameter is linear derating factor,the Max.is 1.0,the units is W/.When parameter is gate-to-source voltage,the symbol is VGS,the Max. is ±30V,the units is V.When parameter is single pulse avalanche energy,the symbol of the IRF740LC is EAS,the Max. is 520,the units is mJ.When parameter is avalanche current,the symbol is IAR,the Max. is 10,the units is A.When parameter is recetitive avalanche energy,the symbol is EAR,the Max. is 13,the units is mJ.When parameter is peak diode recovery dv/dt,the symbol is dv/dt,the Max. is 4.0,the units is V/ns.When parameter is junction and storage temperature range,the Max. is -55 to +150,the units is .When parameter is soldering temperature,for 10 seconds,the Max. is 300(1.6mm from case),the units is .