IRF740B

MOSFET 400V N-Channel B-FET

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IRF740B Picture
SeekIC No. : 00161390 Detail

IRF740B: MOSFET 400V N-Channel B-FET

floor Price/Ceiling Price

Part Number:
IRF740B
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 400 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 10 A
Resistance Drain-Source RDS (on) : 0.43 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220AB
Gate-Source Breakdown Voltage : +/- 30 V
Resistance Drain-Source RDS (on) : 0.43 Ohms
Continuous Drain Current : 10 A
Drain-Source Breakdown Voltage : 400 V


Features:

• 10A, 400V, RDS(on) = 0.54Ω @VGS = 10 V
• Low gate charge ( typical 41 nC)
• Low Crss ( typical 35 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability



Specifications

Symbol Parameter IRF730B IRFS730B Units
VDSS Drain-Source Voltage 400 V
ID Drain Current - Continuous (TC = 25)
              - Continuous (TC = 100)
10 10 * A
6.3 6.3 * A
IDM Drain Current - Pulsed 40 40 * A
VGSS Gate-Source Voltage ± 30 V
EAS Single Pulsed Avalanche Energy 450 mJ
IAR Avalanche Current 10 A
EAR Repetitive Avalanche Energy 13.4 mJ
dv/dt Peak Diode Recovery dv/dt 5.5 V/ns
PD Power Dissipation (TC = 25)
      - Derate above 25
134 44 W
1.08 0.35 W/
TJ, TSTG Operating and Storage Temperature Range -55 to +150
TL Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300



Description

These N-Channel enhancement mode power field effect transistors of the IRF740B are produced using Fairchild's proprietary, planar, DMOS technology.

This advanced technology of the IRF740B has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies and electronic lamp ballasts based on half bridge.




Parameters:

Technical/Catalog InformationIRF740B
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)400V
Current - Continuous Drain (Id) @ 25° C10A
Rds On (Max) @ Id, Vgs540 mOhm @ 5A, 10V
Input Capacitance (Ciss) @ Vds 1800pF @ 25V
Power - Max134W
PackagingTube
Gate Charge (Qg) @ Vgs53nC @ 10V
Package / CaseTO-220
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRF740B
IRF740B



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