MOSFET N-Chan 400V 10 Amp
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 400 V | ||
Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 10 A | ||
Resistance Drain-Source RDS (on) : | 0.55 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-220AB | Packaging : | Tube |
Parameter |
Max. | Units | |
ID @ TC = 25 |
Continuous Drain Current, VGS @ 10V | 10 | A |
ID @ TC = 100 |
Continuous Drain Current, VGS @ 10V | 6.3 | |
IDM |
Pulsed Drain Current | 40 | |
PD @TC = 25 |
Power Dissipation | 125 | W |
Linear Derating Factor | 1.0 | W/ | |
VGS |
Gate-to-Source Voltage | ± 30 | V |
dv/dt |
Peak Diode Recovery dv/dt | 5.9 | V/ns |
TJ |
Operating Junction and Storage Temperature Range |
-55 to + 150 | |
Soldering Temperature, for 10 seconds | 300 (1.6mm from case) | ||
Mounting torque, 6-32 or M3 screw. | 10 lbf?in (1.1N?m) |