IRF7403

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Vgs(th) (Max) @ Id: 1V @ 250µA
Power - Max: 2.5W
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Series: HEXFET®
Packaging: Tube
Gate Charge (Qg) @ Vgs: 57nC @ 10V
Input Capacitance (Ciss) @ Vds: 1200pF @ 25V
Current - Continuous Drain (Id) @ 25° C: 8.5A
Supplier Device Package: 8-SO
Manufacturer: International Rectifier
Rds On (Max) @ Id, Vgs: 22 mOhm @ 4A, 10V


Features:

· Generation V Technology
·Ultra Low On-Resistance
· N-Channel Mosfet
· Surface Mount
· Available in Tape & Reel
· Dynamic dv/dt Rating
· Fast Switching


Specifications

	Parameter	Max.	Units
ID @ TA = 25°C	Continuous Drain Current, VGS @ -10V	9.7	A
ID @ TA = 25°C	Continuous Drain Current, VGS @ 10V	8.5	A
ID @ TA = 70°C	Continuous Drain Current, VGS @ -10V	5.4	A
IDM	Pulsed Drain Current	34	A
PD @TA = 25°C	Maximum Power Dissipation	2.5	W
	Linear Derating Factor	0.02	mW/°C
VGS	Gate-to-Source Voltage	± 20	V
dv/dt	Peak Diode Recovery dv/dt	5.0	V/ns
TJ , TSTG	Junction and Storage Temperature Range	-55 to + 150	°C

Description

Fifth Generation HEXFETs of the IRF7403 from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.

The IRF7403 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application.