IRF7402TR

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 20V
Packaging: Tape & Reel (TR)
Power - Max: 2.5W
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Series: HEXFET®
Gate Charge (Qg) @ Vgs: 22nC @ 4.5V
Current - Continuous Drain (Id) @ 25° C: 6.8A
Vgs(th) (Max) @ Id: 700mV @ 250µA
Supplier Device Package: 8-SO
Input Capacitance (Ciss) @ Vds: 650pF @ 15V
Manufacturer: International Rectifier
Rds On (Max) @ Id, Vgs: 35 mOhm @ 4.1A, 4.5V


Parameters:

Technical/Catalog Information	IRF7402TR
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	6.8A
Rds On (Max) @ Id, Vgs	35 mOhm @ 4.1A, 4.5V
Input Capacitance (Ciss) @ Vds	650pF @ 15V
Power - Max	2.5W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	22nC @ 4.5V
Package / Case	8-SOIC (3.9mm Width)
FET Feature	Logic Level Gate
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IRF7402TR IRF7402TR