Transistor Polarity
: N-Channel
Mounting Style
: SMD/SMT
Gate-Source Breakdown Voltage
: 12 V
Maximum Operating Temperature
: + 150 C
Packaging
: Tube
Configuration
: Single Quad Drain Triple Source
Drain-Source Breakdown Voltage
: 20 V
Package / Case
: SOIC-8
Resistance Drain-Source RDS (on)
: 35 mOhms
Continuous Drain Current
: 6.8 A
Features: ·Generation V Technology
·Ultra Low On-Resistance
·N-Channel MOSFET
·Very Small SOIC Package
·Low Profile (<1.1mm)
·Available in Tape & Reel
·Fast Switching
·Lead-FreeSpecifications
| Parameter |
Symbol |
Max. |
Unit |
| Continuous Drain Current, VGS @ -10V,Ta = 25 |
ID |
6.8 |
A |
| Continuous Drain Current, VGS @ -10V,Ta = 70 |
ID |
5.4 |
A |
| Pulsed Drain Current*1 |
IDM |
54 |
A |
| Power Dissipation Ta = 25 |
PD |
2.5 |
W |
| Power Dissipation Ta = 70 |
PD |
1.6 |
W |
| Linear Derating Factor |
|
0.02 |
/mW |
| Gate-to-Source Voltage |
VGS |
±12 |
V |
| Peak Diode Recovery dv/dt |
dv/dt |
5.0 |
mJ |
| Operating Junction and Storage Temperature Range |
TJ,TSTG |
-55 to + 150 |
|
DescriptionFifth Generation HEXFET® power MOSFETs of the IRF7402PbF from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The IRF7402PbF has been modified through a customized leadframe for enhanced thermal characterstics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared or wave soldering techniques. Power dissipation of greater than 0.8 W is possible in a typical PCB mount application.
Parameters: | Technical/Catalog Information | IRF7402PBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 6.8A |
| Rds On (Max) @ Id, Vgs | 35 mOhm @ 4.1A, 4.5V |
| Input Capacitance (Ciss) @ Vds | 650pF @ 15V |
| Power - Max | 2.5W |
| Packaging | Bulk |
| Gate Charge (Qg) @ Vgs | 22nC @ 4.5V |
| Package / Case | 8-SOIC (3.9mm Width) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRF7402PBF
IRF7402PBF
|
IRF7402PBF Data Sheet
