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IRF7402

MOSFET N-CH 20V 6.8A 8-SOIC

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SeekIC No. : 004376753 Detail

IRF7402: MOSFET N-CH 20V 6.8A 8-SOIC

IRF7402 Data Sheet

floor Price/Ceiling Price

US $ .49~.49 / Piece | Get Latest Price
Part Number:
IRF7402
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 1~570
  • Unit Price
  • $.49
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

* Generation V Technology
* Ultra Low On-Resistance
* N-Channel MOSFET
* Very Small SOIC Package
* Low Profile (<1.1mm)
* Available in Tape & Reel
* Fast Switching


Pinout

Connection Diagram


Specifications

  Parameter Max. Units
ID @ TA = 25 Continuous Drain Current, VGS @ 4.5V 6.8 A
ID @ TA = 70 Continuous Drain Current, VGS @ 4.5V 5.4
IDM Pulsed Drain Current 54
PD @TA = 25 Power Dissipation 2.5 W
PD @TA = 70 Power Dissipation 1.6
  Linear Derating Factor 0.02 W/
VGS Gate-to-Source Voltage ± 12 V
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJ, TSTG Junction and Storage Temperature Range -55 to + 150



Description

Fifth Generation HEXFET® power MOSFETs of the IRF7402 from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The IRF7402 has been modified through a customized leadframe for enhanced thermal characterstics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared or wave soldering techniques. Power dissipation of greater than 0.8 W is possible in a typical PCB mount application.




Parameters:

Technical/Catalog InformationIRF7402
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C6.8A
Rds On (Max) @ Id, Vgs35 mOhm @ 4.1A, 4.5V
Input Capacitance (Ciss) @ Vds 650pF @ 15V
Power - Max2.5W
PackagingTube
Gate Charge (Qg) @ Vgs22nC @ 4.5V
Package / Case8-SOIC (3.9mm Width)
FET FeatureLogic Level Gate
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names IRF7402
IRF7402



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