IRF7401

Features: *Generation V Technology* Ultra Low On-Resistance* N-Channel Mosfet* Surface Mount* Available in Tape & Reel* Dynamic dv/dt Rating* Fast SwitchingPinoutSpecifications Parameter Max. Units ID@TA=25 10 Sec. Pulsed Drain Current, VGS @ 4.5V -4.0 A ID@TA=25 Continuous ...

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IRF7401 Picture
SeekIC No. : 004376751 Detail

IRF7401: Features: *Generation V Technology* Ultra Low On-Resistance* N-Channel Mosfet* Surface Mount* Available in Tape & Reel* Dynamic dv/dt Rating* Fast SwitchingPinoutSpecifications Parameter ...

floor Price/Ceiling Price

Part Number:
IRF7401
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

* Generation V Technology
* Ultra Low On-Resistance
* N-Channel Mosfet
* Surface Mount
* Available in Tape & Reel
* Dynamic dv/dt Rating
* Fast Switching



Pinout

  Connection Diagram


Specifications

  Parameter Max. Units
ID @ TA = 25 10 Sec. Pulsed Drain Current, VGS @ 4.5V -4.0 A
ID @ TA = 25 Continuous Drain Current, VGS @ 4.5V -3.6
ID @ TA = 70 Continuous Drain Current, VGS @ 4.5V -2.9
IDM Pulsed Drain Current -14
PD @TA = 25 Power Dissipation 2.0 W
  Linear Derating Factor 0.016 W/
VGS Gate-to-Source Voltage ± 20 V
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJ, TSTG Junction and Storage Temperature Range -55 to + 150



Description

Fifth Generation HEXFETs of the IRF7401 from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.

The IRF7401 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application.




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