IRF7389

MOSFET N+P 30V 5.3A 8-SOIC

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SeekIC No. : 003430032 Detail

IRF7389: MOSFET N+P 30V 5.3A 8-SOIC

floor Price/Ceiling Price

Part Number:
IRF7389
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Series: HEXFET® Manufacturer: International Rectifier
FET Type: N and P-Channel FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V Gate-Source Cutoff Voltage : - 4.5 V
Current - Continuous Drain (Id) @ 25° C: 7.3A, 5.3A Rds On (Max) @ Id, Vgs: 29 mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) @ Vgs: 33nC @ 10V
Input Capacitance (Ciss) @ Vds: 650pF @ 25V Power - Max: 2.5W
Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO    

Description

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 30V
Vgs(th) (Max) @ Id: 1V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Gate Charge (Qg) @ Vgs: 33nC @ 10V
Power - Max: 2.5W
Supplier Device Package: 8-SO
Series: HEXFET®
Manufacturer: International Rectifier
Rds On (Max) @ Id, Vgs: 29 mOhm @ 5.8A, 10V
Input Capacitance (Ciss) @ Vds: 650pF @ 25V
Current - Continuous Drain (Id) @ 25° C: 7.3A, 5.3A
Packaging: Tube


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