IRF7380TR

IRF7380TR is one type of IRF7380. The following is some information about IRF7380. The IRF7380 is a kind of HEXFET power MOSFET. The typical applications include high frequency DC-DC converters.

There are some benefits of the IRF7380TR as follows. First is low gate to drain charge to reduce switching losses. The second is fully characterized capacitance including effective COSS to simplify design. At last, it has fully characterized avalanche voltage and current.

What comes next is about the absolute maximum ratings of the IRF7380TR. The VDS (Drain-to-Source Voltage) is 8 V. The VGS (Gate-to-Source Voltage) is ± 20 V. The ID @ TA=25 (continuous drain current, VGS @ 10 V) is 3.6 A. The ID @ TA=100 (continuous drain current, VGS @ 10 V) is 2.9 A. The IDM (pulse drain current) is 29 A. The PD @ TA=25 (maximum power dissipation) is 2.0 W. The TSTG (storage temperature) is from -55 to 150. The TJ (operating junction temperature) is from -55 to 150. The dv/dt (peak diode recovery dv/dt) is 2.3 V/ns. The maximum RthJL (thermal resistance, Junction-to-Drain Lead) is 20/W. The maximum RthJA (thermal resistance, Junction-to Ambient ((PCB Mount))) is 50/W.