IRF7379TR

MOSFET N+P 30V 4.3A 8-SOIC

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SeekIC No. : 003429781 Detail

IRF7379TR: MOSFET N+P 30V 4.3A 8-SOIC

floor Price/Ceiling Price

US $ .49~.49 / Piece | Get Latest Price
Part Number:
IRF7379TR
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~4000
  • Unit Price
  • $.49
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Quick Details

Series: HEXFET® Manufacturer: International Rectifier
FET Type: N and P-Channel FET Feature: Standard
Drain to Source Voltage (Vdss): 30V Drain Source Voltage VDS : + / - 20 V
Current - Continuous Drain (Id) @ 25° C: 5.8A, 4.3A Rds On (Max) @ Id, Vgs: 45 mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) @ Vgs: 25nC @ 10V
Input Capacitance (Ciss) @ Vds: 520pF @ 25V Power - Max: 2.5W
Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO    

Description

FET Type: N and P-Channel
Mounting Type: Surface Mount
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Vgs(th) (Max) @ Id: 1V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Gate Charge (Qg) @ Vgs: 25nC @ 10V
Power - Max: 2.5W
Supplier Device Package: 8-SO
Packaging: Tape & Reel (TR)
Series: HEXFET®
Manufacturer: International Rectifier
Input Capacitance (Ciss) @ Vds: 520pF @ 25V
Current - Continuous Drain (Id) @ 25° C: 5.8A, 4.3A
Rds On (Max) @ Id, Vgs: 45 mOhm @ 5.8A, 10V


Parameters:

Technical/Catalog InformationIRF7379TR
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN and P-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C5.8A, 4.3A
Rds On (Max) @ Id, Vgs45 mOhm @ 5.8A, 10V
Input Capacitance (Ciss) @ Vds 520pF @ 25V
Power - Max2.5W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs25nC @ 10V
Package / Case8-SOIC (3.9mm Width)
FET FeatureStandard
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names IRF7379TR
IRF7379TR



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