MOSFET
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Transistor Polarity : | N and P-Channel | Drain-Source Breakdown Voltage : | 30 V |
Gate-Source Breakdown Voltage : | 20 V | Continuous Drain Current : | 5.8 A |
Resistance Drain-Source RDS (on) : | 75 mOhms | Mounting Style : | SMD/SMT |
Package / Case : | SOIC-8 |
Technical/Catalog Information | IRF7379QTRPBF |
Vendor | International Rectifier (VA) |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N and P-Channel |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 5.8A, 4.3A |
Rds On (Max) @ Id, Vgs | 45 mOhm @ 5.8A, 10V |
Input Capacitance (Ciss) @ Vds | 520pF @ 25V |
Power - Max | 2.5W |
Packaging | Digi-Reel? |
Gate Charge (Qg) @ Vgs | 25nC @ 10V |
Package / Case | SO-8 |
FET Feature | Logic Level Gate |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IRF7379QTRPBF IRF7379QTRPBF IRF7379QTRPBFDKR ND IRF7379QTRPBFDKRND IRF7379QTRPBFDKR |