IRF7379QPBF

Configuration :
Maximum Operating Temperature :
Packaging :
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : 20 V
Package / Case : SOIC-8
Transistor Polarity : N and P-Channel
Continuous Drain Current : 5.8 A
Resistance Drain-Source RDS (on) : 75 mOhms


Features:

· Advanced Process Technology
· Ultra Low On-Resistance
· Dual N and P Channel MOSFET
· Surface Mount
· Available in Tape & Reel
· 150°C Operating Temperature
· Automotive [Q101] Qualified
· Lead-Free


Specifications

	Parameter	Max.		Unit
		N-Channel	P-Channel
VSD	Drain-to-Source Voltage	30	-3.0	A
ID @ TA = 25°C	Continuous Drain Current, VGS @ 10V	5.8	-4.3	A
ID @ TA = 70°C	Continuous Drain Current, VGS @ 10V	4.6	-3.4	A
IDM	Pulsed Drain Current	46	-3.4	A
PD @TA = 25°C	Power Dissipation	2.5		W
	Linear Derating Factor	0.02		W/°C
VGS	Gate-to-Source Voltage	+20		V
dv/dt	Peak Diode Recovery dv/dt	5.0	5.0	V/ns
TJ, TSTG	Junction and Storage Temperature Range	-55 to + 150		°C

Description

Specifically designed for Automotive applications, these HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive qualified HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits of the IRF7379QPbF combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

The efficient SO-8 package of the IRF7379QPbF provides enhanced thermal characteristics and dual MOSFET die capability making it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel.

Parameters:

Technical/Catalog Information	IRF7379QPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N and P-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	5.8A, 4.3A
Rds On (Max) @ Id, Vgs	45 mOhm @ 5.8A, 10V
Input Capacitance (Ciss) @ Vds	440pF @ 25V
Power - Max	2.5W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	25nC @ 10V
Package / Case	8-SOIC (3.9mm Width)
FET Feature	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRF7379QPBF IRF7379QPBF