Mounting Style
: SMD/SMT
Drain-Source Breakdown Voltage
: 30 V
Maximum Operating Temperature
: + 150 C
Packaging
: Tube
Gate-Source Breakdown Voltage
: 20 V
Package / Case
: SOIC-8
Transistor Polarity
: N and P-Channel
Configuration
: Dual Dual Drain
Continuous Drain Current
: 5.8 A
Resistance Drain-Source RDS (on)
: 75 mOhms
Features: · Generation V Technology
· Ultra Low On-Resistance
·Complimentary Half Bridge
·Surface Mount
·Fully Avalanche Rated
· Lead-FreeSpecifications
| |
Parameter |
Max. |
Units |
| N-Channel |
P-Channel |
| VSD |
Drain-to-Source Voltage |
30 |
-30 |
A |
| ID @ TA = 25°C |
Continuous Drain Current, VGS @ 10V |
5.8 |
-4.6 |
| ID @ TA = 70°C |
Continuous Drain Current, VGS @ 10V |
4.6 |
-3.4 |
| IDM |
Pulsed Drain Current |
46 |
-34 |
| PD @TA = 25°C |
Power Dissipation |
2. |
W |
| |
Linear Derating Factor |
0.02 |
mW/ |
| VGS |
Gate-to-Source Voltage |
± 20 |
V |
| dv/dt |
Peak Diode Recovery dv/dt |
5.0 -5.0 |
V/ns |
| TJ, TSTG |
Junction and Storage Temperature Range |
-55 to + 150 |
|
DescriptionFifth Generation HEXFETs of the IRF7379PbF from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The IRF7379PbF has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques.
Parameters: | Technical/Catalog Information | IRF7379PBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N and P-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 5.8A, 4.3A |
| Rds On (Max) @ Id, Vgs | 45 mOhm @ 5.8A, 10V |
| Input Capacitance (Ciss) @ Vds | 440pF @ 25V |
| Power - Max | 2.5W |
| Packaging | Bulk |
| Gate Charge (Qg) @ Vgs | 25nC @ 10V |
| Package / Case | 8-SOIC (3.9mm Width) |
| FET Feature | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRF7379PBF
IRF7379PBF
|
IRF7379PBF Data Sheet
