Configuration
:
Maximum Operating Temperature
:
Packaging
:
Mounting Style
: SMD/SMT
Drain-Source Breakdown Voltage
: 30 V
Gate-Source Breakdown Voltage
: 20 V
Package / Case
: SOIC-8
Transistor Polarity
: N and P-Channel
Continuous Drain Current
: 5.8 A
Resistance Drain-Source RDS (on)
: 75 mOhms
Features: · Generation V Technology
·Ultra Low On-Resistance
·Complimentary Half Bridge
·Surface Mount
·Fully Avalanche Rated
·Lead-FreeSpecifications
|
|
Parameter |
Max. |
Units
|
|
N-Channel |
P-Channel |
|
VSD |
Drain-to-Source Voltage |
30 |
-30 |
A |
|
ID @ TA = 25°C |
Continuous Drain Current, VGS @ 10V |
5.8 |
-4.3 |
|
ID @ TA = 70°C |
Continuous Drain Current, VGS @ 10V |
4.6 |
-3.4 |
|
IDM |
Pulsed Drain Current |
46 |
-34 |
|
PD @TA = 25°C |
Power Dissipation |
2.5 |
W |
|
|
Linear Derating Factor |
0.02 |
W/°C |
|
VGS |
Gate-to-Source Voltage |
± 20 |
V |
|
dv/dt |
Peak Diode Recovery dv/dt |
5.0 -5.0 |
V/ns |
|
TJ, TSTG |
Junction and Storage Temperature Range |
55 to + 150 |
°C |
Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 10 ) Notes:
N-Channel ISD 2.4A, di/dt73A/s, VDDV(BR)DSS, TJ 150°C P-Channel ISD -1.8A, di/dt90A/s, VDDV(BR)DSS, TJ 150°C
DescriptionFifth Generation HEXFETs IRF7379IPbF from International Rectifier IRF7379IPbF utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The SO-8 IRF7379IPbF has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques.
Parameters: | Technical/Catalog Information | IRF7379IPBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N and P-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 5.8A, 4.3A |
| Rds On (Max) @ Id, Vgs | 45 mOhm @ 5.8A, 10V |
| Input Capacitance (Ciss) @ Vds | 440pF @ 25V |
| Power - Max | 2.5W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 25nC @ 10V |
| Package / Case | 8-SOIC (3.9mm Width) |
| FET Feature | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRF7379IPBF
IRF7379IPBF
|
IRF7379IPBF Data Sheet
