FET Type: N and P-Channel
Mounting Type: Surface Mount
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Vgs(th) (Max) @ Id: 1V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Gate Charge (Qg) @ Vgs: 25nC @ 10V
Power - Max: 2.5W
Supplier Device Package: 8-SO
Series: HEXFET®
Manufacturer: International Rectifier
Input Capacitance (Ciss) @ Vds: 520pF @ 25V
Current - Continuous Drain (Id) @ 25° C: 5.8A, 4.3A
Rds On (Max) @ Id, Vgs: 45 mOhm @ 5.8A, 10V
Packaging: Tube
Features: *Generation V Technology
* Ultra Low On-Resistance
* Complimentary Half Bridge
* Surface Mount
* Fully Avalanche RatedPinout
Specifications
|
Parameter |
Max. |
Units |
| N-Channel |
P-Channel |
| VSD |
Drain-to-Source Voltage |
30 |
-30 |
A |
| ID @ TA = 25 |
Continuous Drain Current, V GS @ 10V |
5.8 |
-4.3 |
| ID @ TA = 70 |
Continuous Drain Current, V GS @ 10V |
4.6 |
-3.4 |
| IDM |
Pulsed Drain Current |
46 |
-34 |
| PD @TA = 25 |
Power Dissipation |
2.5 |
W |
|
Linear Derating Factor |
0.02 |
W/ |
| VGS |
Gate-to-Source Voltage |
± 20 |
V |
| dv/dt |
Peak Diode Recovery dv/dt |
5.0 |
-5.0 |
V/ns |
| TJ, TSTG |
Junction and Storage Temperature Range |
-55 to + 150 |
|
DescriptionFifth Generation HEXFETs IRF7379 from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The SO-8 IRF7379 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques.
IRF7379 Data Sheet
