FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Vgs(th) (Max) @ Id: 1V @ 250µA
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
FET Feature: Diode (Isolated)
Power - Max: 2W
Current - Continuous Drain (Id) @ 25° C: 6.5A
Gate Charge (Qg) @ Vgs: 33nC @ 10V
Supplier Device Package: 8-SO
Manufacturer: International Rectifier
Input Capacitance (Ciss) @ Vds: 650pF @ 25V
Series: FETKY™
Rds On (Max) @ Id, Vgs: 29 mOhm @ 5.8A, 10V
Parameters: | Technical/Catalog Information | IRF7353D2TR |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 6.5A |
| Rds On (Max) @ Id, Vgs | 29 mOhm @ 5.8A, 10V |
| Input Capacitance (Ciss) @ Vds | 650pF @ 25V |
| Power - Max | 2W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 33nC @ 10V |
| Package / Case | 8-SOIC (3.9mm Width) |
| FET Feature | Diode (Isolated) |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | IRF7353D2TR
IRF7353D2TR
|
IRF7353D2TR Data Sheet
