IRF7353D1

MOSFET N-CH 30V 6.5A 8-SOIC

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SeekIC No. : 003430742 Detail

IRF7353D1: MOSFET N-CH 30V 6.5A 8-SOIC

floor Price/Ceiling Price

Part Number:
IRF7353D1
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Series: FETKY™ Manufacturer: International Rectifier
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Diode (Isolated) Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 6.5A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 32 mOhm @ 5.8A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) @ Vgs: 33nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 650pF @ 25V
Power - Max: 2W Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Vgs(th) (Max) @ Id: 1V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
FET Feature: Diode (Isolated)
Power - Max: 2W
Current - Continuous Drain (Id) @ 25° C: 6.5A
Gate Charge (Qg) @ Vgs: 33nC @ 10V
Packaging: Tube
Supplier Device Package: 8-SO
Rds On (Max) @ Id, Vgs: 32 mOhm @ 5.8A, 10V
Manufacturer: International Rectifier
Input Capacitance (Ciss) @ Vds: 650pF @ 25V
Series: FETKY™


Features:

*Co-packaged HEXFET® Power MOSFET
and Schottky Diode
* Ideal For Buck Regulator Applications
* N-Channel HEXFET
* Low VF Schottky Rectifier
* Generation 5 Technology
* SO-8 Footprint





Pinout

  Connection Diagram




Specifications

Parameter Maximum Units
ID @ TA = 25 Continuous Drain Current 6.5 A
ID @ TA = 70 5.2
IDM Pulsed Drain Current 52
PD @TA = 25 Power Dissipation 2.0 W
PD @TA = 25 1.3
Linear Derating Factor 16 mW/
VGS Gate-to-Source Voltage ± 20 V
dv/dt Peak Diode Recovery dv/dt -5.0 V/ns
TJ, TSTG Junction and Storage Temperature Range -55 to +150





Description

The FETKY family of co-packaged MOSFETs and Schottky diodes IRF7353D1 offers the designer an innovative, board space saving solution for switching regulator and power management applications. Generation 5 HEXFET Power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combinining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications.

The SO-8 IRF7353D1 has been modified through a customized leadframe for enhanced thermal characteristics. The SO-8 package is designed for vapor phase, infrared or wave soldering techniques.






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