Gate-Source Breakdown Voltage
: +/- 20 V
Mounting Style
: SMD/SMT
Drain-Source Breakdown Voltage
: 100 V
Maximum Operating Temperature
: + 150 C
Packaging
: Tube
Package / Case
: SOIC-8
Transistor Polarity
: N and P-Channel
Configuration
: Dual Dual Drain
Continuous Drain Current
: 2.1 A, - 1.5 A
Resistance Drain-Source RDS (on)
: 210 mOhms, 480 mOhms
Features: ·Ultra Low On-Resistance
·Dual N and P Channel MOSFET
·Surface Mount
·Available in Tape and Reel
·Lead-FreePinout
Specifications
|
|
Parameter |
Max. |
Units |
| N-Channel |
P-Channel |
| VdS |
Drain-to-Source Voltage |
100 |
-100 |
A |
| ID @ Ta= 25 |
Continuous Drain Current, VGS @ 10V |
2.1 |
-1.5 |
| ID @ Ta = 70 |
Continuous Drain Current, VGS @ 10V |
1.7 |
-1.2 |
| IDM |
Pulsed Drain Current |
8.4 |
-6.0 |
| PD @ Ta = 25 |
Power Dissipation |
2.0 |
W |
| |
Linear Derating Factor |
0.016 |
W/ |
| EAS |
Single Pulse Avalanche Energy |
35 |
51 |
mJ |
| VGS |
Gate-to-Source Voltage |
± 20 |
± 20 |
V |
| dv/dt |
Peak Diode Recovery dv/dt |
4.0 |
4.3 |
V/ns |
| TJ ,TSTG |
Junction and Storage Temperature Range |
-55 to + 150 |
|
DescriptionThese dual N and P channel HEXFET® power MOSFETs IRF7350PbF from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in DC motor drives and load management applications.
The SO-8 IRF7350PbF has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques.
Parameters: | Technical/Catalog Information | IRF7350PBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N and P-Channel |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 2.1A, 1.5A |
| Rds On (Max) @ Id, Vgs | 210 mOhm @ 2.1A, 10V |
| Input Capacitance (Ciss) @ Vds | 380pF @ 25V |
| Power - Max | 2W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 28nC @ 10V |
| Package / Case | 8-SOIC (3.9mm Width) |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRF7350PBF
IRF7350PBF
|
IRF7350PBF Data Sheet
