IRF7342QPBF

Resistance Drain-Source RDS (on) :
Maximum Operating Temperature :
Packaging :
Mounting Style : SMD/SMT
Transistor Polarity : P-Channel
Gate-Source Breakdown Voltage : 20 V
Package / Case : SOIC-8
Configuration : Dual
Continuous Drain Current : - 3.4 A
Drain-Source Breakdown Voltage : - 55 V


Features:

·Advanced Process Technology
·Ultra Low On-Resistance
·Dual P Channel MOSFET
·Surface Mount
·Available in Tape & Reel
·150°C Operating Temperature
·Automotive [Q101] Qualified
·Lead-Free


Specifications

Parameter	Symbol	Rating	Unit
Continuous Drain Current, VGS @ 10V,Tc = 25	ID	-3.4	A
Continuous Drain Current, VGS @ 10V,Tc = 75	ID	-2.7	A
Pulsed Drain Current*1	IDM	-27	A
Power Dissipation Tc = 25	PD	2.0	W
Power Dissipation Tc = 75	PD	1.3	W
Linear Derating Factor		0.016	/W
Drain- Source Voltage	VDS	-55	V
Gate-to-Source Voltage	VGS	±20	V
Gate-to-Source Voltage Single Pulse tp<10s	VGSM	30	V
Single Pulse Avalanche Energy*4	EAS	114	mJ
Peak Diode Recovery dv/dt *2	dv/dt	5.0	V/ns
Operating Junction and Storage Temperature Range	TJ,TSTG	-55 to + 175

Description

Specifically designed for Automotive applications, these HEXFET® Power MOSFET's IRF7342QPbF in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive qualified HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

The efficient SO-8 package IRF7342QPbF provides enhanced thermal characteristics and dual MOSFET die capability making it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel.

Parameters:

Technical/Catalog Information	IRF7342QPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	2 P-Channel (Dual)
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25° C	3.4A
Rds On (Max) @ Id, Vgs	105 mOhm @ 3.4A, 10V
Input Capacitance (Ciss) @ Vds	690pF @ 25V
Power - Max	2W
Packaging	Tube
Gate Charge (Qg) @ Vgs	38nC @ 10V
Package / Case	8-SOIC (3.9mm Width)
FET Feature	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRF7342QPBF IRF7342QPBF