Mounting Style
: SMD/SMT
Transistor Polarity
: P-Channel
Maximum Operating Temperature
: + 150 C
Packaging
: Tube
Gate-Source Breakdown Voltage
: 20 V
Package / Case
: SOIC-8
Configuration
: Dual
Resistance Drain-Source RDS (on)
: 0.105 Ohms
Continuous Drain Current
: - 3.4 A
Drain-Source Breakdown Voltage
: - 55 V
Features: ·Generation V Technology
·Ultra Low On-Resistance
·Dual P-Channel Mosfet
·Surface Mount
·Available in Tape & Reel
·Dynamic dv/dt Rating
·Fast Switching
·Lead-FreePinout
Specifications
|
Characteristics |
PARAMETER |
Max. |
Unit |
| Continuous Drain Current, VGS @ 10V |
ID @ TA = 25°C |
-3.4 |
A |
| Continuous Drain Current, VGS @ 10V |
ID @ TA = 70°C |
-2.7 |
A |
| Pulsed Drain Current |
IDM |
-27 |
A |
| Power Dissipation (PCB Mount) |
PD @TA = 25°C |
2.0 |
W |
| Power Dissipation (PCB Mount) |
PD @TA = 25°C |
1.3 |
W |
| Linear Derating Factor (PCB Mount)* |
|
0.016 |
mW/ |
| Gate-to-Source Voltage |
VGS |
± 20 |
V |
| Single Pulse Avalanche Energy |
EAS |
30 |
mJ |
| Avalanche Current |
VGSM |
114 |
A |
| Peak Diode Recovery dv/dt |
dv/dt |
5.0 |
V/ns |
| Junction and Storage Temperature Range |
Tj,Tstg |
-55~150 |
|
DescriptionFifth Generation HEXFETs IRF7342PbF from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The SO-8 IRF7342PbF has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application.
Parameters: | Technical/Catalog Information | IRF7342PBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | 2 P-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25° C | 3.4A |
| Rds On (Max) @ Id, Vgs | 105 mOhm @ 3.4A, 10V |
| Input Capacitance (Ciss) @ Vds | 690pF @ 25V |
| Power - Max | 2W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 38nC @ 10V |
| Package / Case | 8-SOIC (3.9mm Width) |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRF7342PBF
IRF7342PBF
|
IRF7342PBF Data Sheet
