IRF7342D2PBF

Configuration :
Maximum Operating Temperature :
Mounting Style : SMD/SMT
Transistor Polarity : P-Channel
Packaging : Tube
Gate-Source Breakdown Voltage : 20 V
Package / Case : SOIC-8
Continuous Drain Current : - 3.4 A
Resistance Drain-Source RDS (on) : 170 mOhms
Drain-Source Breakdown Voltage : - 55 V


Features:

Co-packaged HEXFET® Power MOSFET and Schottky Diode
Ideal For Buck Regulator Applications
P-Channel HEXFET®
Low VF Schottky Rectifier
SO-8 Footprint
 Lead-Free


Specifications

	Parameter	Maximum	Units
ID @ TA = 25	Continuous Drain Current, VGS @ -10V	-3.4	A
ID @ TA = 70	Continuous Drain Current, VGS @ -10V	-2.7
IDM	Pulsed Drain Current	-27
PD @TA= 25	Power Dissipation	2.0	W
PD @TA = 70	Power Dissipation	1.3
	Linear Derating Factor	16	W/
VGS	Gate-to-Source Voltage	± 20	V
dv/dt	Peak Diode Recovery dv/dt	-5.0	V/ns
TJ, TSTG	Junction and Storage Temperature Range	-55 to +150

Description

The FETKYTM family of Co-packaged HEXFETs and Schottky diodes IRF7342D2PbF offer the designer an innovative board space saving solution for switching regulator and power management applications. HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications.

The SO-8 IRF7342D2PbF has been modified through a customized leadframe for enhanced thermal characteristics. The SO-8 package is designed for vapor phase, infrared or wave soldering techniques.

Parameters:

Technical/Catalog Information	IRF7342D2PBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25° C	3.4A
Rds On (Max) @ Id, Vgs	105 mOhm @ 3.4A, 10V
Input Capacitance (Ciss) @ Vds	690pF @ 25V
Power - Max	2W
Packaging	Tube
Gate Charge (Qg) @ Vgs	38nC @ 10V
Package / Case	8-SOIC (3.9mm Width)
FET Feature	Diode (Isolated)
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRF7342D2PBF IRF7342D2PBF