FET Feature: Logic Level Gate
Mounting Type: Surface Mount
FET Type: 2 P-Channel (Dual)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power - Max: 2W
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Current - Continuous Drain (Id) @ 25° C: 3.4A
Supplier Device Package: 8-SO
Series: HEXFET®
Manufacturer: International Rectifier
Drain to Source Voltage (Vdss): 55V
Rds On (Max) @ Id, Vgs: 105 mOhm @ 3.4A, 10V
Gate Charge (Qg) @ Vgs: 38nC @ 10V
Input Capacitance (Ciss) @ Vds: 690pF @ 25V
Packaging: Tube
Features: *Generation V Technology
* Ultra Low On-Resistance
* Dual P-Channel Mosfet
* Surface Mount
* Available in Tape & Reel
* Dynamic dv/dt Rating
* Fast SwitchingPinout
Specifications
|
Parameter |
Max. |
Units |
| VDS |
Drain- Source Voltage |
-55 |
V |
| ID @ TC = 25 |
Continuous Drain Current, VGS @ -10V |
-3.4 |
A |
| ID @ TC = 70 |
Continuous Drain Current, VGS @ -10V |
-2.7 |
| IDM |
Pulsed Drain Current |
-27 |
| PD @TC = 25 |
Power Dissipation |
2.0 |
W |
| PD @TC = 70 |
Power Dissipation |
1.3 |
|
Linear Derating Factor |
0.016 |
W/ |
| VGS |
Gate-to-Source Voltage |
± 20 |
V |
| VGSM |
Gate-to-Source Voltage Single Pulse tp<10µs |
30 |
V |
| EAS |
Single Pulse Avalanche Energy |
114 |
|
| dv/dt |
Peak Diode Recovery dv/dt |
5.0 |
V/ns |
| TJ, TSTG |
Junction and Storage Temperature Range |
-55 to + 150 |
|
DescriptionFifth Generation HEXFETs IRF7342 from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET PowerMOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The SO-8 IRF7342 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application.
IRF7342 Data Sheet
