Maximum Operating Temperature
:
Packaging
:
Transistor Polarity
: N-Channel
Mounting Style
: SMD/SMT
Gate-Source Breakdown Voltage
: 20 V
Package / Case
: SOIC-8
Configuration
: Dual
Drain-Source Breakdown Voltage
: 55 V
Resistance Drain-Source RDS (on)
: 65 mOhms
Continuous Drain Current
: 4.7 A
Features: · Generation V Technology
· Ultra Low On-Resistance
· Dual N-Channel Mosfet
· Surface Mount
· Available in Tape & Reel
· Dynamic dv/dt Rating
· Fast Switching
· Lead-Free
Specifications
| |
Parameter |
Max. |
Units |
| VDS |
Drain- Source Voltage |
55 |
V |
ID @ TC = 25
ID @ TC = 70
IDM |
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current |
4.7
3.8
38 |
A |
PD @TC = 25
PD @TC = 70 |
Power Dissipation
Power Dissipation |
2.0
1.3 |
W |
| |
Linear Derating Factor |
0.016 |
W/ |
VGS
VGSM |
Gate-to-Source Voltage
Gate-to-Source Voltage Single Pulse tp<10s |
± 20
30 |
V
V |
| EAS |
Single Pulse Avalanche Energy |
72 |
|
dv/dt
TJ, TSTG |
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range |
5.0
-55 to + 150 |
V/ns
|
DescriptionFifth Generation HEXFETs IRF7341IPbF from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The SO-8 IRF7341IPbF has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application.
Parameters: | Technical/Catalog Information | IRF7341IPBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25° C | 4.7A |
| Rds On (Max) @ Id, Vgs | 50 mOhm @ 4.7A, 10V |
| Input Capacitance (Ciss) @ Vds | 740pF @ 25V |
| Power - Max | 2W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 36nC @ 10V |
| Package / Case | 8-SOIC (3.9mm Width) |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRF7341IPBF
IRF7341IPBF
|
IRF7341IPBF Data Sheet
