Series: -
Manufacturer: Vishay Siliconix
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Gate Charge (Qg) @ Vgs: 45nC @ 10V
Current - Continuous Drain (Id) @ 25° C: 4.9A
Vgs(th) (Max) @ Id: 4V @ 250µA
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Power - Max: 74W
Drain to Source Voltage (Vdss): 450V
Input Capacitance (Ciss) @ Vds: 680pF @ 25V
Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 2.9A, 10V
Features: • Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-freeSpecifications
|
PARAMETER |
SYMBOL |
LIMIT |
UNIT |
|
Drain-Source Voltage |
VDS |
450 |
V |
|
Gate-Source Voltage |
VGS |
± 20 |
|
Continuous Drain Current |
VGS at 10 V |
TC = 25 |
ID |
4.9 |
A |
|
TC = 100 |
3.1 |
|
Pulsed Drain Currenta |
IDM |
20 |
|
Linear Derating Factor |
|
0.59 |
W/ |
|
Single Pulse Avalanche Energyb |
EAS |
330 |
mJ |
|
Repetitive Avalanche Currenta |
IAR |
4.9 |
A |
|
Repetitive Avalanche Energya |
EAR |
7.4 |
mJ |
|
Maximum Power Dissipation |
TC = 25 |
PD |
74 |
W |
|
Peak Diode Recovery dV/dtc |
dV/dt |
4.0 |
V/ns |
|
Operating Junction and Storage Temperature Range |
TJ, Tstg |
- 55 to +150 |
|
|
Soldering Recommendations (Peak Temperature) |
for 10 s |
|
300d |
|
Mounting Torque |
6-32 or M3 screw |
|
10 |
lbf ` in |
|
1.1 |
N ` m |
Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, Starting TJ = 25 , L =24mH, RG = 25 , IAS = 4.9A (see fig. 12).
c. ISD 4.9A, dI/dt 80A/s, VDD VDS, TJ 150 .
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may applyDescriptionThird generation Power MOSFETs of the IRF734 from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package of the IRF734 is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
IRF734 Data Sheet
