Mounting Style
: SMD/SMT
Continuous Drain Current
: 6.3 A
Maximum Operating Temperature
: + 150 C
Packaging
: Tube
Package / Case
: SOIC-8
Transistor Polarity
: N and P-Channel
Configuration
: Dual Dual Drain
Drain-Source Breakdown Voltage
: 12 V
Gate-Source Breakdown Voltage
: 8 V
Resistance Drain-Source RDS (on)
: 34 mOhms
Features: · Ultra Low On-Resistance
· Dual N and P Channel MOSFET
· Surface Mount
· Available in Tape & Reel
· Lead-FreeSpecifications
| |
Parameter |
Max. |
Units |
| N-Channel |
P-Channel |
| VDS |
Drain-to-Source Voltage |
12 |
-12 |
|
| ID @ TA=25 |
Continuous Drain Current, VGS @ 10V |
6.3 |
-3.0 |
A |
| ID @ TC=70 |
Continuous Drain Current, VGS @ 10V |
5.2 |
-2.5 |
A |
| IDM |
Pulsed Drain Current |
26 |
-13 |
A |
| PD @ TA=25 |
Power Dissipation |
2.0 |
W |
| PD @ TA=25 |
|
1.3 |
W |
| |
Linear Derating Factor |
16 |
W/ |
| VGS |
Gate-to-Source Voltage |
±12 |
±8.0 |
V |
| TSTG |
Storage Temperature Range
Soldering Temperature, for 10 seconds |
-55 to + 150 |
|
DescriptionThese N and P channel MOSFETs IRF7338PbF from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.
This Dual SO-8 IRF7338PbF has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering technique
Parameters: | Technical/Catalog Information | IRF7338PBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N and P-Channel |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25° C | 6.3A, 3A |
| Rds On (Max) @ Id, Vgs | 34 mOhm @ 6A, 4.5V |
| Input Capacitance (Ciss) @ Vds | 640pF @ 9V |
| Power - Max | 2W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 8.6nC @ 4.5V |
| Package / Case | 8-SOIC (3.9mm Width) |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRF7338PBF
IRF7338PBF
|
IRF7338PBF Data Sheet
