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IRF7338

Features: *Ultra Low On-Resistance* Dual N and P Channel MOSFET* Surface Mount* Available in Tape & ReelPinoutSpecifications Parameter Max. Units N-Channel P-Channel VSD Drain-to-Source Voltage 12 -12 A ID @ TA = 25 Continuous Drain Current, VGS @ 4.5V 6.3 -3.0 ID ...

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SeekIC No. : 004376731 Detail

IRF7338: Features: *Ultra Low On-Resistance* Dual N and P Channel MOSFET* Surface Mount* Available in Tape & ReelPinoutSpecifications Parameter Max. Units N-Channel P-Channel VSD Drain-t...

IRF7338 Data Sheet

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Part Number:
IRF7338
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

*Ultra Low On-Resistance
* Dual N and P Channel MOSFET
* Surface Mount
* Available in Tape & Reel




Pinout

Connection Diagram




Specifications

Parameter Max. Units
N-Channel P-Channel
VSD Drain-to-Source Voltage 12 -12 A
ID @ TA = 25 Continuous Drain Current, VGS @ 4.5V 6.3 -3.0
ID @ TA = 70 Continuous Drain Current, VGS @ 4.5V 5.2 -2.5
IDM Pulsed Drain Current 26 -13
PD @TA = 25 Power Dissipation 2.0 W
PD @TA = 70 Power Dissipation 1.3
Linear Derating Factor 16 W/
VGS Gate-to-Source Voltage ±12 ± 8.0 V
TJ, TSTG Junction and Storage Temperature Range -55 to + 150





Description

These N and P channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.

This Dual SO-8 IRF7338 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering technique






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