Features: ·Co-Pack Dual N-channel HEXFET Power MOSFET® and Schottky Diode·Ideal for Synchronous Buck DC-DC Converters Up to 11A Peak Output·Low Conduction Losses·Low Switching Losses·Low Vf Schottky Rectifier·Lead-FreePinoutSpecifications Symbol Parameter Max. Units VDS Drain...
IRF7335D1PbF: Features: ·Co-Pack Dual N-channel HEXFET Power MOSFET® and Schottky Diode·Ideal for Synchronous Buck DC-DC Converters Up to 11A Peak Output·Low Conduction Losses·Low Switching Losses·Low Vf Scho...
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Symbol |
Parameter |
Max. |
Units |
VDS | Drain-Source Voltage |
30 |
V |
ID @ TA = 25 | Continuous Drain Current,VGS @ 10V |
10 |
A |
ID @ TA = 70 | Continuous Drain Current,VGS @ 10V |
8.1 | |
IDM | Pulsed Drain Current |
81 | |
PD @TC= 25 | Power Dissipation |
2.1 |
W |
PD @TC = 70 | Power Dissipation |
1.3 |
W |
Linear Derating Factor |
0.02 |
W/ | |
VGS | Gate-to-Source Voltage |
±12 |
|
EAS (6 sigma) | Single Pulse Avalanche Energy |
20 |
|
TJ | Operating Junction and |
-40 to+175 |
|
TSTG | Storage Temperature RangeSoldering Temperature for 10 seconds |
300 |
The FETKYTM family of Co-Pack HEXFET® MOSFETs and Schottky diodes IRF7335D1PbF offers the designer an innovative, board space saving solution for switching regulator and power management applications. Advanced HEXFET® MOSFETs combined with low forward drop Schottky results in an extremely efficient device suitable for a wide variety of portable electronics applications.
The SO-14 IRF7335D1PbF has been modified through a customized leadframe for enhanced thermal characteristics and multiple die capability making it ideal in a variety of power applications. With these improvements multiple devices can be used in an application with dramatically reduced board space. Internal connections enable easier board layout design with reduced stray inductance.