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IRF7335D1

Features: • Co-Pack Dual N-channel HEXFET® Power MOSFET and Schottky Diode• Ideal for Synchronous Buck DC-DC Converters Up to 11A Peak Output• Low Conduction Losses• Low Switching Losses• Low Vf Schottky RectifierPinoutSpecifications Parameter Max. Units ...

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SeekIC No. : 004376729 Detail

IRF7335D1: Features: • Co-Pack Dual N-channel HEXFET® Power MOSFET and Schottky Diode• Ideal for Synchronous Buck DC-DC Converters Up to 11A Peak Output• Low Conduction Losses• Low ...

IRF7335D1 Data Sheet

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Part Number:
IRF7335D1
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Co-Pack Dual N-channel HEXFET® Power MOSFET
   and Schottky Diode
• Ideal for Synchronous Buck DC-DC
   Converters Up to 11A Peak Output
• Low Conduction Losses
• Low Switching Losses
• Low Vf Schottky Rectifier


Pinout

Connection Diagram


Specifications

  Parameter Max. Units
VDS Drain- Source Voltage 30 V
ID @ TC = 25 Continuous Drain Current, VGS @ -10V 10 A
ID @ TC = 70 Continuous Drain Current, VGS @ -10V 8.1
IDM Pulsed Drain Current 81
PD @TC = 25 Power Dissipation 2.0 W
PD @TC = 70 Power Dissipation 1.3
  Linear Derating Factor 0.02 W/
VGS Gate-to-Source Voltage ± 12 V
EAS (6 sigma) Single Pulse Avalanche Energy 50 mJ
TJ Operating Junction and -55 to + 150
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds		 300 (1.6mm from case )



Description

The FETKYTM family of Co-Pack HEXFET® MOSFETs and Schottky diodes IRF7335D1 offers the designer an innovative, board space saving solution for switching regulator and power management applications. Advanced HEXFET ®MOSFETs combined with low forward drop Schottky results in an extremely efficient device suitable for a wide variety of portable electronics applications.

The SO-14 IRF7335D1 has been modified through a customized leadframe for enhanced thermal characteristics and multiple die capability making it ideal in a variety of power applications. With these improvements multiple devices can be used in an application with dramatically reduced board space. Internal connections enable easier board layout design with reduced stray inductance.




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