IRF7331PBF

MOSFET

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SeekIC No. : 00153560 Detail

IRF7331PBF: MOSFET

floor Price/Ceiling Price

US $ .27~.68 / Piece | Get Latest Price
Part Number:
IRF7331PBF
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.68
  • $.42
  • $.29
  • $.27
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : 12 V Continuous Drain Current : 7 A
Resistance Drain-Source RDS (on) : 30 mOhms Configuration : Dual
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Gate-Source Breakdown Voltage : 12 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 20 V
Package / Case : SOIC-8
Configuration : Dual
Continuous Drain Current : 7 A
Resistance Drain-Source RDS (on) : 30 mOhms


Features:

* Ultra Low On-Resistance
* Dual N-Channel MOSFET
* Surface Mount
* Available in Tape & Reel
* Lead-Free



Pinout

  Connection Diagram


Specifications

  Parameter Max. Units
VDS Drain- Source Voltage 20 V
ID @ TC = 25 Continuous Drain Current, VGS @ 4.5V 7.0 A
ID @ TC = 70 Continuous Drain Current, VGS @ 4.5V 5.5
IDM Pulsed Drain Current 28
PD @TC = 25 Power Dissipation 2.0 W
PD @TC = 70 Power Dissipation 1.3
  Linear Derating Factor 16 W/
VGS Gate-to-Source Voltage ± 12 V
TJ, TSTG Junction and Storage Temperature Range -55 to + 150



Description

These N-Channel HEXFET® power MOSFETs IRF7331PbF from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.

The SO-8 IRF7331PbF has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering technique




Parameters:

Technical/Catalog InformationIRF7331PBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET Polarity2 N-Channel (Dual)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C7A
Rds On (Max) @ Id, Vgs30 mOhm @ 7A, 4.5V
Input Capacitance (Ciss) @ Vds 1340pF @ 16V
Power - Max2W
PackagingTube
Gate Charge (Qg) @ Vgs20nC @ 4.5V
Package / Case8-SOIC (3.9mm Width)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRF7331PBF
IRF7331PBF



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