MOSFET 2N-CH 20V 7A 8-SOIC
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Series: | HEXFET® | Manufacturer: | International Rectifier |
FET Type: | 2 N-Channel (Dual) | FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 20V | Gate-Source Cutoff Voltage : | - 4.5 V |
Current - Continuous Drain (Id) @ 25° C: | 7A | Rds On (Max) @ Id, Vgs: | 30 mOhm @ 7A, 4.5V |
Vgs(th) (Max) @ Id: | 1.2V @ 250µA | Gate Charge (Qg) @ Vgs: | 20nC @ 4.5V |
Input Capacitance (Ciss) @ Vds: | 1340pF @ 16V | Power - Max: | 2W |
Mounting Type: | Surface Mount | Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
The IRF7331 is real-time clocks for microcomputers that can be connected directly to data buses of 16 bit CPUs. The features of IRF7331 are: (1)ultra low on-resistance; (2)dual N-channel MOSFET; (3)surface mount; (4)available in tape & reel.
The following is about the absolute maximum ratings of IRF7331: (1)drain-source voltage: 20V; (2)continuous drain current, VGS @ 4.5V: 7.0A; (3)continuous drain current, VGS @ 4.5V: 5.5A; (4)pulsed drain current: 28A; (5)power dissipation: 2.0W; (6)linear derating factor: 16,W/; (7)storage junction temperature range: -55 to +150.
The electrical characteristics of the IRF7331 are: (1)drain-source breakdown voltage: 20V min at VGS=0V; (2)gate thresholad voltage: 0.6V min and 1.2V max at VDS=VGS, ID=250A; (3)gate-source leakage forward: 100nA max at VGS=12V; (4)gate-source leakage reverse: -100nA max at VGS=-12V; (5)total gate charge: 13nC min and 20nC max at ID=21A; (6)turn-on delay time: 7.6ns typ; (7)turn-off delay time: 110ns typ.